S-shaped I – V characteristics of high-power Schottky diodes at high current densities

The effect of a set of quasi-neutral regimes of carrier transport in semiconductors, including, along with diffusion and drift, recently discovered diffusion stimulated by quasi-neutral drift, on the characteristics of structures is successively taken into account. The order of change in the carrier transport regimes in Schottky-diode structures is investigated and the features in the I – V characteristics caused by this change are established. The results of analytical study of these features are confirmed using numerical simulation.