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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 5, Pages 484–489 (Mi phts5234)

This article is cited in 2 papers

Semiconductor physics

Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures

A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin

Ioffe Institute, St. Petersburg

Abstract: A lumped model of the dynamics of the controlled switching of high-Q closed-mode structures in rectangular large cavities (up to 1 $\times$ 1 mm and larger) based on AlGaAs/InGaAs/GaAs laser heterostructures is presented. The model considers the modulation of the useful power of a closed-mode structure due to controlled generation switching to an alternative closed mode. Generation-switching control between closed mode structures is implemented due to a variation in the optical loss of one structure. A variation in the optical loss occurs due to an increase in interband optical absorption due to the quantum-confined Stark effect upon the application of voltage to a laser crystal segment in the closed-mode propagation region.

Keywords: closed mode, laser heterostructure, quantum-confined Stark effect.

Received: 15.01.2020
Revised: 21.01.2020
Accepted: 21.01.2020

DOI: 10.21883/FTP.2020.05.49266.9343


 English version:
Semiconductors, 2020, 54:5, 581–586

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