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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 5, Pages 504–509 (Mi phts5236)

This article is cited in 5 papers

Manufacturing, processing, testing of materials and structures

Formation of multilayer structures with integrated membranes based on porous silicon

V. V. Bolotov, K. E. Ivlev, E. V. Knyazev, I. V. Ponomareva, V. E. Roslikov

Omsk Scientific Center, Siberian Branch of the Russian Academy of Sciences

Abstract: Multilayer integrated porous membranes in a monolithic frame were obtained. Porous membranes consist of macroporous silicon with pore diameters of up to 10 $\mu$m and channel silicon with channel diameters from 100 to 300 nm. A laboratory technology is proposed to formation of macroporous/channel silicon two-layer structures using high-resistance $n$-Si substrates (1 $\Omega$ cm). The mechanism of pore formation is discussed and how this mechanism affects the morphology of porous layers when formic acid and ammonium hydroxide are used as electrolytes.

Keywords: porous silicon, electrochemical etching, electron microscopy, multilayer structures, membranes.

Received: 24.12.2019
Revised: 28.12.2019
Accepted: 30.12.2019

DOI: 10.21883/FTP.2020.05.49269.9340


 English version:
Semiconductors, 2020, 54:5, 609–613

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© Steklov Math. Inst. of RAS, 2024