RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 4, Pages 341–345 (Mi phts5240)

This article is cited in 5 papers

Spectroscopy, interaction with radiation

Raman scattering in the InSb–MnSb eutectic composite

I. Kh. Mammadova, D. G. Araslyb, R. N. Ragimovb, A. A. Khalilovab

a National Academy of Aviation, Baku, Bina, Azerbaijan
b Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan

Abstract: The Raman spectra of bulk samples of the InSb–MnSb eutectic composite and its thin films produced by flash evaporation are studied. In the Raman spectra of the bulk samples, the TO and LO modes of InSb at the frequencies 179.5 and 192.4 cm$^{-1}$ and a number of peaks at the frequencies 122, 127, 167, 211, and 245.5 cm$^{-1}$, close to the available theoretical data on the phonon frequencies in MnSb, are observed. In the Raman spectra of the films, the TO mode is shifted to lower energies and corresponds to 178 cm$^{-1}$, and the LO mode is shifted to higher energies and corresponds to 196 cm$^{-1}$. The shift of the LO mode to higher frequencies in the composite with respect to the corresponding mode in InSb is apparently caused by strains at the matrix–inclusion interface and by the contribution of scattering at surface phonons to the Raman spectrum.

Keywords: eutectic composite, thin films, Raman scattering.

Received: 19.11.2019
Revised: 04.12.2019
Accepted: 04.12.2019

DOI: 10.21883/FTP.2020.04.49137.9315


 English version:
Semiconductors, 2020, 54:4, 412–416

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024