M. V. Grigor'ev, D. A. Ghazaryan, E. E. Vdovin, Yu. N. Khanin, S. V. Morozov, K. S. Novoselov, “On the role of structural imperfections of graphene in resonant tunneling through localized states in the <nobr>$h$</nobr>-BN barrier of van-der-Waals heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 3,Pages <nobr>238

Semiconductor structures, low-dimensional systems, quantum phenomena

On the role of structural imperfections of graphene in resonant tunneling through localized states in the $h$-BN barrier of van-der-Waals heterostructures

M. V. Grigor'ev^a, D. A. Ghazaryan^bc, E. E. Vdovin^a, Yu. N. Khanin^a, S. V. Morozov^a, K. S. Novoselov^bd

^a Institute of Microelectronics Technology and High-Purity Materials RAS
^b School of Physics and Astronomy, The University of Manchester, Manchester, United Kingdom
^c Department of Physics, National Research University Higher School of Economics, Moscow, Russia
^d Department of Material Science and Engineering, National University of Singapore, Singapore, Republic of Singapore

Abstract: Resonant tunneling through defect levels in the $h$-BN barrier of van-der-Waals heterostructures is investigated. The effect of multiplication of the tunneling resonances through these levels due to the effect of a high degree of imperfection of the structure of the neighboring graphene layer formed intentionally by its processing in plasma is found. Various mechanisms of such an effect are discussed.

Keywords: graphene, van-der-Waals heterostructures, crystal-lattice defects, boron nitride, tunneling transistor, resonant tunneling.

Received: 26.08.2019
Revised: 06.11.2019
Accepted: 07.11.2019

DOI: 10.21883/FTP.2020.03.49025.9249