A. V. Zhelannov, A. S. Ionov, B. I. Seleznev, D. G. Fedorov, “Ohmic contacts to gallium nitride-based structures”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 3,Pages <nobr>246

This article is cited in 2 papers

Micro- and nanocrystalline, porous, composite semiconductors

Ohmic contacts to gallium nitride-based structures

A. V. Zhelannov^a, A. S. Ionov^a, B. I. Seleznev^b, D. G. Fedorov^a

^a JSC OKB-Planeta, Velikii Novgorod
^b Yaroslav-the-Wise Novgorod State University

Abstract: Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility of forming low-resistance contacts without the application of high-temperature treatment is shown. It is demonstrated, for AlGaN/GaN-based heterostructures, that the characteristics of Ti/Al/Ni/Au ohmic contacts are improved upon using ion implantation through a silicon-dioxide mask.

Keywords: Heterostructure, gallium nitride, ohmic contact, metallization system, ion implantation, fast thermal annealing, specific contact resistance.

Received: 23.07.2019
Revised: 03.09.2019
Accepted: 05.11.2019

DOI: 10.21883/FTP.2020.03.49028.9224