Photoreversible current in InGaN/GaN-based LED heterostructures with different numbers of QWs

InGaN/GaN-based LED heterostructures with different numbers of quantum wells are investigated by photocurrent spectroscopy in the wavelength range of 350 – 500 nm. As a result of the analysis of a series of spectra obtained at various $p$–$n$-junction biases, the effect of changing photocurrent direction when varying the excitation wavelength (photoreversible effect) is discovered. The range of $p$–$n$-junction biases for which this effect is observed in structures with different numbers of quantum wells in the active region is established.