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Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 2, Pages 138–143 (Mi phts5276)

This article is cited in 6 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Molecular states of composite fermions in self-organized InP/GaInP quantum dots in zero magnetic field

A. M. Mintairovab

a Ioffe Institute, St. Petersburg
b Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556, USA

Abstract: The size and positions of regions of line localization and the magnetic-field (0–10 T) dependence of the low-temperature (10 K) photoluminescence spectra of single InP/GaInP quantum dots with a number of electrons of $N$ = 5–7 and a Wigner–Seitz radius of $\sim$2.5 are determined using a near-field scanning optical microscope. The formation of composite fermion molecules with a size coinciding with that of localization regions and bond lengths of $\sim$30 and 50 nm, respectively, at a Landau-level filling factor from 1/2 to 2/7 in zero magnetic field is established. At $N$ = 6, the pairing and rearrangement of composite fermions under photoexcitation are found, which offers opportunities for the use of InP/GaInP quantum dots to create a magnetic-field-free topological quantum gate.

Keywords: InP/GaInP quantum dots, composite fermions, photoluminescence, near-field scanning microscopy, topological quantum gate.

Received: 26.09.2019
Revised: 30.09.2019
Accepted: 30.09.2019

DOI: 10.21883/FTP.2020.02.48893.9269


 English version:
Semiconductors, 2020, 54:2, 190–195

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