R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Yu. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov, “Structural and dielectric study of thin amorphous layers of the Ge–Sb–Te system prepared by RF magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 2,Pages <nobr>149

Amorphous, glassy, organic semiconductors

Structural and dielectric study of thin amorphous layers of the Ge–Sb–Te system prepared by RF magnetron sputtering

R. A. Castro-Arata^a, V. M. Stozharov^a, D. M. Dolginsev^a, A. A. Kononov^a, Yu. Saito^b, P. Fons^b, J. Tominaga^b, N. I. Anisimova^a, A. V. Kolobov^a

^a Herzen State Pedagogical University of Russia, St. Petersburg
^b National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Japan

Abstract: The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.

Keywords: structural and dielectric properties, Ge–Sb–Te chalcogenide system.

Received: 15.10.2019
Revised: 23.10.2019
Accepted: 23.10.2019

DOI: 10.21883/FTP.2020.02.48895.9287