Abstract:
Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400$^{\circ}$C to 625$^{\circ}$C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625$^{\circ}$C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature.