È. I. Moiseev, M. V. Maksimov, N. V. Kryzhanovskaya, O. I. Simchuk, M. M. Kulagina, S. A. Kadinskaya, M. Guina, A. E. Zhukov, “Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 2,Pages <nobr>212

This article is cited in 5 papers

Semiconductor physics

Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots

È. I. Moiseev^a, M. V. Maksimov^a, N. V. Kryzhanovskaya^ab, O. I. Simchuk^a, M. M. Kulagina^c, S. A. Kadinskaya^a, M. Guina^d, A. E. Zhukov^ab

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg
^d Tampere University of Technology, Tampere, Finland

Abstract: The results are presented on a comparative analysis of the spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx $\mu$m with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold compared to microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of the radiated power with the laser modes. They are also characterized by a jump to excited-state optical transition lasing. The InGaAsN-based microdisk lasers lack these disadvantages.

Keywords: microlaser, quantum wells, quantum dots, nitrogen-containing semiconductors.

Received: 20.10.2019
Revised: 29.10.2019
Accepted: 29.10.2019

DOI: 10.21883/FTP.2020.02.48907.9290