RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 1, Pages 22–24 (Mi phts5294)

This article is cited in 4 papers

Electronic properties of semiconductors

Photodielectric effect in Bi$_{12}$SiO$_{20}$ sillenite crystals

V. T. Avanesyan, I. V. Piskovatskova

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: The results of studies of the effect of illumination on the frequency dependence of the electrical parameters of bismuth silicate Bi$_{12}$SiO$_{20}$ single crystals are presented. Illumination in the visible spectral region induces a change in the dielectric parameters (the photodielectric effect) and the manifestation of photoconductivity in the low-frequency region under study. The hopping character of conduction in the dark and upon excitation with light is established. The possible mechanisms of the photodielectric effect and charge transport in the crystals are discussed.

Keywords: bismuth silicate, photodielectric effect, photoconductivity, permittivity.

Received: 18.06.2019
Revised: 08.07.2019
Accepted: 08.07.2019

DOI: 10.21883/FTP.2020.01.48763.9192


 English version:
Semiconductors, 2020, 54:1, 19–21

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024