RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 1, Pages 59–64 (Mi phts5307)

This article is cited in 6 papers

Micro- and nanocrystalline, porous, composite semiconductors

Anomalous edge emission from zinc selenide heavily doped with oxygen

N. K. Morozovaa, I. N. Miroshnikovaab

a National Research University "Moscow Power Engineering Institute"
b Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, Russia

Abstract: The specific features of the emission spectra of pure chemical-vapor deposited (CVD) ZnSe condensates grown with an excess of selenium and with doping with oxygen are studied. The anomalous 477(490)-nm edge emission prevailing in the low-temperature cathodoluminescence spectra of ZnSe(O) is studied in order to elucidate the nature of this emission. The relation of this emission to the stoichiometry composition of ZnSe and to the concentration of dissolved oxygen is established. The data suggesting the role of the copper impurity are obtained. On the basis of the band-anticrossing theory, a band model is developed to interpret the nature of the basic luminescence bands of ZnSe(O) and ZnSe(O,Cu) in the near-edge spectral region. It is shown that the model for ZnSe(O) is similar to the model previously proposed for ZnS(O) and CdS(O).

Keywords: self-activated, stoichiometric, point defects, isoelectronic centers, complexes.

Received: 11.04.2019
Revised: 22.04.2019
Accepted: 02.08.2019

DOI: 10.21883/FTP.2020.01.48775.9136


 English version:
Semiconductors, 2020, 54:1, 102–107

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024