Multidimensional $dU/dt$ effect in high-power thyristors

The method allowing to take into account the influence of the design peculiarities of a power thyristor on its $dU/dt$ parameter is described. A simple model is proposed, that makes it possible to find the parameters of the auxiliary thyristor structure that belongs to the regenera-tive control gate and provides the given value of the thyristor $dU/dt$ parameter. The minimum possible value of turn-on current of the thyristor, limited by a given value of the maximum rate of voltage rise, is found.