Abstract:
Cooling of devices made of monocrystalline silicon to a temperature of 123 K, at which the coefficient of thermal expansion of silicon exhibits a zero crossing, improves their stability and reduces noise. In the temperature range (100 – 295 K), the temperature dependences of the losses (damping) in a tuning fork mechanical resonator made of silicon strips and connected by direct bonding technique were investigated. This allows non-destructive monitoring of the quality of the bonding, as well as to identify the peculiarities of behavior and changes that occur at the bonding interface over time.
Keywords:silicon wafer, direct bonding, mechanical resonator, zero-crossing temperature of coefficient of thermal expansion.