A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, “High-power 4<nobr>$H$</nobr>-SiC mosfet with an epitaxial buried channel”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1,Pages <nobr>79

This article is cited in 4 papers

Semiconductor physics

High-power 4$H$-SiC mosfet with an epitaxial buried channel

A. I. Mikhaylov^a, A. V. Afanasyev^a, V. A. Ilyin^a, V. V. Luchinin^a, S. A. Reshanov^b, A. Schöner^b

^a Saint Petersburg Electrotechnical University "LETI"
^b Ascatron AB, Kista, Sweden

Abstract: A method for reducing the on-state resistance of a high-power 4$H$-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped $p$-region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.

Keywords: 4$H$-SiC, epitaxy, transistor channel, MOSFET.

Received: 04.09.2019
Revised: 16.09.2019
Accepted: 16.09.2019

DOI: 10.21883/FTP.2020.01.48779.9253