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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 1, Pages 103–110 (Mi phts5316)

This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Application of high-frequency EPR spectroscopy for the identification and separation of nitrogen and vanadium sites in silicon carbide crystals and heterostructures

E. V. Edinach, A. D. Krivoruchko, A. S. Gurin, M. V. Muzafarova, I. V. Il'in, R. A. Babunts, N. G. Romanov, A. G. Badalyan, P. G. Baranov

Ioffe Institute, St. Petersburg

Abstract: The advantage of the high-frequency spectroscopy of electron paramagnetic resonance (EPR) for the identification of nitrogen donors and a deep compensating vanadium impurity in various crystallographic positions of the silicon-carbide crystal is shown. Measurements are performed using a new generation EPR spectrometer operating in the continuous wave and pulsed modes at frequencies of 94 and 130 GHz in a wide range of magnetic fields (-7–7 T) and temperatures (1.5–300 K). A magneto-optical closed-cycle cryogenic system (Spectormag PT), highly stable generators (94 and 130 GHz), and a cavity-free system for supplying microwave power to the sample are used.

Keywords: electron paramagnetic resonance, electron spin echo, semiconductors, silicon carbide, donor impurities.

Received: 02.08.2019
Revised: 12.08.2019
Accepted: 12.08.2019

DOI: 10.21883/FTP.2020.01.48784.9233


 English version:
Semiconductors, 2020, 54:1, 150–156

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