High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy

The results of studies of nominally undoped epitaxial $p$-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 $\Omega$ cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of $n$-GaSb substrates used for the growth of nominally undoped GaSb layers.