N. V. Dikareva, B. N. Zvonkov, I. V. Samartsev, S. M. Nekorkin, N. V. Baidus, A. A. Dubinov, “GaAs-based laser diode with InGaAs waveguide quantum wells”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12,Pages <nobr>1718

This article is cited in 3 papers

Semiconductor physics

GaAs-based laser diode with InGaAs waveguide quantum wells

N. V. Dikareva^a, B. N. Zvonkov^a, I. V. Samartsev^a, S. M. Nekorkin^a, N. V. Baidus^a, A. A. Dubinov^ab

^a National Research Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: This paper presents the results of research of electrically pumped InGaAs/GaAs laser on waveguide quantum wells, operating at room temperature. The minimum threshold current was 15 A. The stable lasing at a wavelength of 1010 nm was obtained, and the width of the radiation pattern in a plane perpendicular to the layers of the structure was (10 $\pm$ 2) angular degrees.

Keywords: GaAs, laser diode, waveguide, quantum well, radiation pattern.

Received: 08.08.2019
Revised: 12.08.2019
Accepted: 12.08.2019

DOI: 10.21883/FTP.2019.12.48633.9238