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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 11, Pages 1485–1496 (Mi phts5353)

This article is cited in 2 papers

Surface, interfaces, thin films

The mechanism of singlet oxygen generation on the surface of excited nanoporous silicon

D. M. Samosvat, O. P. Chikalova-Luzina, G. G. Zegrya

Ioffe Institute, St. Petersburg

Abstract: The mechanism of singlet-oxygen generation on the surface of photoexcited nanoporous silicon has been theoretically analyzed. It is shown that the mechanism of singlet-oxygen generation is based on nonradiative energy transfer from nanoporous silicon to an oxygen molecule according to the Dexter exchange mechanism. An analytical expression is obtained, and the probability of energy transfer from nanoporous silicon to an oxygen molecule is numerically estimated. It is shown that its numerical value, on the order of $\sim$(10$^{3}$–10$^{4}$) s$^{-1}$, is in good agreement with the experimental data.

Keywords: nanoporous silicon, singlet oxygen, energy transfer.

Received: 03.10.2018
Revised: 18.02.2019
Accepted: 03.06.2019

DOI: 10.21883/FTP.2019.11.48462.8991


 English version:
Semiconductors, 2019, 53:11, 1445–1456

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© Steklov Math. Inst. of RAS, 2025