Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process

Using molecular dynamic technique modelling of nanoindentation of GaAs (001) surface terminated with As atoms to the depth up to 1 nm in the range of temperatures from 1 K to 15 K was carried out. It was shown that it results in to the reconstruction of a surface with formation of stable As dimers (1 $\times$ 2), which do not disappear after withdraw of the indenter from the surface.