A. A. Lebedev, V. V. Kozlovsky, P. A. Ivanov, M. E. Levinshteĭn, A. V. Zubov, “Impact of high energy elctron irradiation on surge currents in 4<nobr>$H$</nobr>-SiC JBS Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 10,Pages <nobr>1448

This article is cited in 1 paper

Semiconductor physics

Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes

A. A. Lebedev^a, V. V. Kozlovsky^b, P. A. Ivanov^a, M. E. Levinshteĭn^a, A. V. Zubov^c

^a Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The effect of high energy (0.9 MeV) electron irradiation on surge currents of high-voltage 4$H$-SiC JBS was investigated in the microsecond range of the forward current pulses duration. With irradiation dose $\Phi$ growth, the threshold of hole injection monotonically increases, and the base modulation level by minority carriers (holes) decreases. At $\Phi$ = 1.5 $\times$ 10$^{16}$ cm$^{-2}$, the hole injection is not observed up to forward voltage values of $\sim$30 V and forward current density $j\approx$ 9000 A/cm$^2$.

Keywords: silicon carbide, Schottky diodes, electron irradiation, surge currents.

Received: 16.05.2019
Revised: 24.05.2019
Accepted: 24.05.2019

DOI: 10.21883/FTP.2019.10.48306.9160