D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev, “GaAs/GaP quantum-well heterostructures grown on Si substrates”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages <nobr>1167

This article is cited in 7 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

GaAs/GaP quantum-well heterostructures grown on Si substrates

D. S. Abramkin^ab, M. O. Petrushkov^a, M. A. Putyato^a, B. R. Semyagin^a, E. A. Emelyanov^a, V. V. Preobrazhenskii^a, A. K. Gutakovskii^ab, T. S. Shamirzaev^abc

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Ural Federal University, Yekaterinburg, Russia

Abstract: Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

Keywords: hybrid substrates, photoluminescence, GaP on Si, molecular-beam epitaxy, quantum wells.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48118.01