V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages 1178

This article is cited in 4 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m

V. V. Utochkin^a, V. Ya. Aleshkin^a, A. A. Dubinov^a, V. I. Gavrilenko^a, N. S. Kulikov^a, M. A. Fadeev^a, V. V. Rumyantsev^a, N. N. Mikhailov^b, S. A. Dvoretskii^b, S. V. Morozov^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Stimulated emission from a heterostructure with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te quantum wells, placed in a waveguide layer of wide-gap CdHgTe, is obtained at wavelengths of 14–11 $\mu$m and a temperatures of 18–80 K. The threshold Auger recombination energy is calculated for a set of heterostructures with quantum wells of pure HgTe with a band gap of 90 meV (wavelength 14 $\mu$m). The possibility of fabricating lasers operating at 14 $\mu$m and working temperatures higher than that of liquid nitrogen is demonstrated.

Keywords: threshold energy, Auger recombination, HgCdTe.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48120.03