E. S. Obolenskaya, A. S. Ivanov, D. G. Pavel'ev, V. A. Kozlov, A. P. Vasil'ev, “Comparison of the features of electron transport and subterahertz generation in diodes based on 6-, 18-, 70-, and 120-period GaAs/AlAs superlattices”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages <nobr>1218

This article is cited in 2 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Comparison of the features of electron transport and subterahertz generation in diodes based on 6-, 18-, 70-, and 120-period GaAs/AlAs superlattices

E. S. Obolenskaya^a, A. S. Ivanov^a, D. G. Pavel'ev^a, V. A. Kozlov^ab, A. P. Vasil'ev^cd

^a Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^d Ioffe Institute, St. Petersburg

Abstract: A comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage drop across one superlattice period is determined for all special points in the current–voltage characteristics of the diodes. The mechanism of the appearance of stable current oscillations in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a high doping level is investigated.

Keywords: superlattices, electron transport, diodes, THz generation.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48127.10