S. M. Plankina, O. V. Vikhrova, B. N. Zvonkov, S. Yu. Zubkov, R. N. Kriukov, A. V. Nezhdanov, D. A. Pavlov, I. Yu. Pashen'kin, A. A. Sushkov, “On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages <nobr>1233

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures

S. M. Plankina^a, O. V. Vikhrova^b, B. N. Zvonkov^b, S. Yu. Zubkov^a, R. N. Kriukov^a, A. V. Nezhdanov^a, D. A. Pavlov^a, I. Yu. Pashen'kin^c, A. A. Sushkov^a

^a Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedure is based on the application of Raman spectroscopy in combination with photoluminescence spectroscopy in the mode of the lateral scanning of transverse cleavages. The compositions of the GaInAs and GaInP solid solutions are determined.

Keywords: metal–organic vapor phase epitaxy, heterostructures, metamorphous layer, Raman scattering, photoluminescence.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48130.13