I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages <nobr>1279

This article is cited in 6 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure

I. Yu. Zabavichev^ab, A. A. Potekhin^ab, A. S. Puzanov^ab, S. V. Obolensky^ab, V. A. Kozlov^ac

^a Lobachevsky State University of Nizhny Novgorod
^b Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics "Sedakov Scientific Research Institute of Measurement Systems", Nizhny Novgorod, Russia
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.

Keywords: molecular-dynamics method, cluster of radiation-induced defects, high-performance calculations.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48139.23