R. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. Shastin, “Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages <nobr>1285

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation

R. Kh. Zhukavin^a, S. G. Pavlov^b, A. Pohl^c, N. V. Abrosimov^d, H. Riemann^d, B. Redlich^e, H.-W. Hübers^bc, V. N. Shastin^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b DLR Institute of Optical Sensor Systems, Berlin, Germany
^c Department of Physics, Humboldt-Universität zu Berlin, Berlin, Germany
^d Leibniz-Institut für Kristallzüchtung, Berlin, Germany
^e ED Radboud University Nijmegen, Institute for Molecules and Materials, FELIX Laboratory, Nijmegen, The Netherlands

Abstract: The results of the experimental observation of stimulated terahertz emission under optical intracenter excitation of uniaxially strained bismuth-doped silicon are presented. Pumping in the presented experiment is performed using a FELIX free-electron laser. It is shown that uniaxial strain of the silicon crystal leads to a significant change in the stimulated emission spectrum of the impurity.

Keywords: silicon, bismuth, uniaxial pressure, intracenter optical excitation, emission-frequency tuning.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48140.24