T. A. Uaman Svetikova, A. V. Ikonnikov, V. V. Rumyantsev, D. V. Kozlov, V. I. Chernichkin, A. V. Galeeva, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Evolution of the impurity photoconductivity in CdHgTe epitaxial films with temperature”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages <nobr>1297

This article is cited in 2 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Evolution of the impurity photoconductivity in CdHgTe epitaxial films with temperature

T. A. Uaman Svetikova^a, A. V. Ikonnikov^a, V. V. Rumyantsev^b, D. V. Kozlov^b, V. I. Chernichkin^a, A. V. Galeeva^a, V. S. Varavin^c, N. N. Mikhailov^c, S. A. Dvoretskii^c, S. V. Morozov^b, V. I. Gavrilenko^b

^a Lomonosov Moscow State University
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The photoconductivity spectra of epitaxial CdHgTe films are investigated by Fourier-transform spectroscopy at various temperatures. Features associated with both the interband absorption and ionization of impurity/defect states are found in the spectra. Their evolution with temperature is traced. The temperatures of “vanishing” of the impurity features are determined, which makes it possible to assess the acceptor concentration in the structures under study using the electroneutrality equation.

Keywords: photoconductivity, impurity, CdHgTe, Fourier-transform spectroscopy.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48143.27