A. V. Ikonnikov, V. I. Chernichkin, V. S. Dudin, D. A. Akopian, A. N. Akimov, A. E. Klimov, O. E. Tereshchenko, L. I. Ryabova, D. R. Khokhlov, “Features of the impurity-photoconductivity spectra of PbSnTe(In) epitaxial films with temperature changes”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages <nobr>1303

This article is cited in 2 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Features of the impurity-photoconductivity spectra of PbSnTe(In) epitaxial films with temperature changes

A. V. Ikonnikov^a, V. I. Chernichkin^a, V. S. Dudin^a, D. A. Akopian^a, A. N. Akimov^b, A. E. Klimov^bc, O. E. Tereshchenko^bd, L. I. Ryabova^a, D. R. Khokhlov^ae

^a Lomonosov Moscow State University
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Novosibirsk State Technical University
^d Novosibirsk State University
^e P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow

Abstract: The photoconductivity spectra of PbSnTe(In) epitaxial films are investigated by Fourier spectroscopy in the far infrared range at temperatures from 4.2 to 32.4 K. In addition to interband transitions, subgap features associated with the excitation of impurity-defect states are found in the spectra. The evolution of the spectra with temperature and additional illumination is traced.

Keywords: photoconductivity, impurity states, surface states, PbSnTe, Burstein–Moss effect.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48144.28