RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 8, Pages 1030–1036 (Mi phts5424)

This article is cited in 3 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Influence of the charge state of xenon ions on the depth distribution profile upon implantation into silicon

Yu. V. Balakshinab, A. V. Kozhemiakoc, S. Petrovicd, M. Eriche, A. A. Shemukhinab, V. S. Chernyshc

a Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
b Quantum Technology Center of M. V. Lomonosov Moscow State University
c Faculty of Physics, Lomonosov Moscow State University
d Vinča Institute of Nuclear Sciences
e Vinca Institute of Nuclear Sciences, University of Belgrade, Serbia

Abstract: Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states $q$ = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 $\times$ (10$^{14}$–10$^{15}$) ion/cm$^2$. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

Keywords: ion implantation, multiply charged ions, Rutherford backscattering spectroscopy (RBS).

Received: 19.03.2019
Revised: 27.03.2019
Accepted: 01.04.2019

DOI: 10.21883/FTP.2019.08.47990.9108


 English version:
Semiconductors, 2019, 53:8, 1011–1017

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024