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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 8, Pages 1043–1046 (Mi phts5426)

This article is cited in 4 papers

Electronic properties of semiconductors

Effect of X-ray radiation on the optical properties of photorefractive bismuth-silicate crystals

V. T. Avanesyan, I. V. Piskovatskova, V. M. Stozharov

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: The results of investigations of the optical-absorption spectra of bismuth-silicate (Bi$_{12}$SiO$_{20}$) single crystals are presented. The band-gap width and the characteristic Urbach energy are determined. The effect of preliminary X-ray irradiation on the behavior of the experimental spectral dependences and the values of the characteristic parameters induced by the bismuth-silicate defect structure is established.

Keywords: bismuth silicate, sillenite, spectral dependence, optical absorption.

Received: 26.03.2019
Revised: 05.04.2019
Accepted: 08.04.2019

DOI: 10.21883/FTP.2019.08.47992.9115


 English version:
Semiconductors, 2019, 53:8, 1024–1027

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