Yu. N. Khanin, E. E. Vdovin, A. Mishchenko, K. S. Novoselov, “Observation of regions of negative differential conductivity and current generation during tunneling through zero-dimensional defect levels of the $h$-BN barrier in graphene/$h$-BN/graphene heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8,Pages 1058

This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Observation of regions of negative differential conductivity and current generation during tunneling through zero-dimensional defect levels of the $h$-BN barrier in graphene/$h$-BN/graphene heterostructures

Yu. N. Khanin^a, E. E. Vdovin^a, A. Mishchenko^b, K. S. Novoselov^b

^a Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia
^b School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK

Abstract: Tunneling and magnetic tunneling are investigated in graphene/$h$-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the $h$-BN barrier, and current caused by their presence is generated.

Keywords: tunneling, magnetic tunneling, van der Waals heterosystems, graphene.

Received: 06.03.2019
Revised: 10.03.2019
Accepted: 13.03.2019

DOI: 10.21883/FTP.2019.08.47995.9093