M. L. Lunina, L. S. Lunin, D. L. Alfimova, A. S. Pashchenko, È. M. Danilina, V. V. Nefedov, “Effect of bismuth on the properties of elastically stressed AlGaInAsP<nobr>$\langle\mathrm{Bi}\rangle$</nobr>/InP heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8,Pages <nobr>1110

This article is cited in 1 paper

Micro- and nanocrystalline, porous, composite semiconductors

Effect of bismuth on the properties of elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures

M. L. Lunina^a, L. S. Lunin^ab, D. L. Alfimova^a, A. S. Pashchenko^a, È. M. Danilina^a, V. V. Nefedov^b

^a Federal Research Center Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, Russia
^b Platov South-Russian State Polytechnic University (SRSTU (NPI)), Novocherkassk, Russia

Abstract: The results of growing elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$ thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures is investigated.

Keywords: heterostructures, temperature gradient, liquid-zone thickness, lattice period, thermal-expansion coefficient, diffraction reflection curve, elastic stresses, dislocations, external quantum yield.

Received: 12.02.2019
Revised: 07.03.2019
Accepted: 11.03.2019

DOI: 10.21883/FTP.2019.08.48003.9082