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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 8, Pages 1128–1134 (Mi phts5440)

This article is cited in 6 papers

Semiconductor physics

Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers

S. A. Blokhina, M. A. Bobrova, A. A. Blokhinab, A. G. Kuz'menkovb, N. A. Maleeva, V. M. Ustinovb, E. S. Kolodeznyic, S. S. Rochasc, A. V. Babichevc, I. I. Novikovc, A. G. Gladyshevc, L. Ya. Karachinskyad, D. V. Denisovde, K. O. Voropaevfg, A. S. Ionovg, A. Yu. Egorovc

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Connector Optics LLC, St. Petersburg
e Saint Petersburg Electrotechnical University "LETI"
f Yaroslav-the-Wise Novgorod State University
g JSC OKB-Planeta, Velikii Novgorod

Abstract: The results of studying the dynamic characteristics of 1.55-$\mu$m single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InAlGaAs quantum wells are presented. It is found that the proposed design of the active region and optical microcavity of the laser make it possible in principle to attain a high level of differential laser gain in the temperature range of 20$^{\circ}$C–85$^{\circ}$C, but weak electron localization leads to an increase in gain compression at elevated temperatures. Due to this fact, the VCSEL modulation bandwidth at 20$^{\circ}$C can be increased from 9.2 to 11.5 GHz due to an increase in output optical losses, while the modulation bandwidth at 85$^{\circ}$C does not exceed 8.5 GHz, depends weakly on the output optical losses, and is mainly limited by the optical-gain saturation.

Keywords: surface-emitting laser, wafer fusion, modulation bandwidth, photon-cavity lifetime.

Received: 25.03.2019
Revised: 01.04.2019
Accepted: 01.04.2019

DOI: 10.21883/FTP.2019.08.48006.9112


 English version:
Semiconductors, 2019, 53:8, 1104–1109

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