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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 8, Page 1140 (Mi phts5442)

This article is cited in 3 papers

Semiconductor physics

Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass

S. N. Abolmasova, A. S. Abramovab, A. V. Semenova, I. S. Shahrayc, E. I. Terukovabd, E. V. Malchukovab, I. N. Trapeznikovab

a R&D Center of Thin Film Technologies in Energetics, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
c Hevel LLC, Moscow, Russia
d St. Petersburg Electrotechnical University, St. Petersburg, Russia

Abstract: Attenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative studies show a strong link between microstructure factor R * and effective lifetime of amorphous silicon ( a -Si:H) passivation layers incorporating an interface buffer layer, which prevents the epitaxial growth. It is demonstrated that thin a -Si:H films deposited on glass can be used as ATR substrates in this case. The obtained results show that a -Si:H films with R * close to 0.1 are required for manufacturing of high-efficiency (>23

Received: 01.03.2019
Revised: 01.03.2019
Accepted: 25.03.2019

Language: English

DOI: 10.21883/FTP.2019.08.48008.9113


 English version:
Semiconductors, 2019, 53:8, 1114–1119

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