V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Kruglov, D. G. Reunov, “Submonolayer InGaAs/GaAs quantum dots grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8,Pages <nobr>1159

This article is cited in 6 papers

Manufacturing, processing, testing of materials and structures

Submonolayer InGaAs/GaAs quantum dots grown by MOCVD

V. Ya. Aleshkin^a, N. V. Baidus^b, A. A. Dubinov^a, K. E. Kudryavtsev^a, S. M. Nekorkin^b, A. V. Kruglov^b, D. G. Reunov^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2$^{\circ}$ is selected for laser structures emitting at wavelengths above 1.2 $\mu$m at room temperature. As a result, a quantum-dot density of 4 $\times$ 10$^{10}$ cm$^{-2}$ is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 $\mu$m at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm$^2$.

Keywords: quantum dots, MOS-hydride epitaxy, GaAs/InGaAs.

Received: 01.04.2019
Revised: 11.04.2019
Accepted: 11.04.2019

DOI: 10.21883/FTP.2019.08.48011.9124