On the properties of isoparametric AlInGaAsP/InP heterostructures

The paper discusses the influence of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures. The main parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium phosphide substrates from the liquid phase in the temperature gradiend field are determined.