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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 6, Pages 839–843 (Mi phts5493)

This article is cited in 5 papers

Semiconductor physics

Ñlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures

A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin

Ioffe Institute, St. Petersburg

Abstract: The work is devoted to the study of the formation features of high-quality closed modes based on total internal reflection effect in rectangular resonators of large (up to thousands wavelengths) size based on InGaAs/GaAs/AlGaAs laser heterostructures. Features of the spectral composition and spatial configurations of closed mode structures are experimentally investigated. The presence of frequency combs in the spectra was demonstrated and their correspondence to separate spatial configurations of closed modes was shown. The effect of a change in pumping and temperature on the mode composition is also considered.

Received: 29.12.2018
Revised: 14.01.2019
Accepted: 14.01.2019

DOI: 10.21883/FTP.2019.06.47739.9058a


 English version:
Semiconductors, 2019, 53:6, 828–832

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© Steklov Math. Inst. of RAS, 2025