D. S. Pankratova, A. P. Novitskii, K. V. Kuskov, I. A. Serhiienko, D. V. Leybo, A. Burkov, P. P. Konstantinov, V. V. Khovaylo, “Influence of la doping on the transport properties of Bi$_{1-x}$La$_{x}$CuSeO oxyselenides”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 5,Pages 631

This article is cited in 2 papers

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

Influence of la doping on the transport properties of Bi$_{1-x}$La$_{x}$CuSeO oxyselenides

D. S. Pankratova^a, A. P. Novitskii^a, K. V. Kuskov^a, I. A. Serhiienko^a, D. V. Leybo^a, A. Burkov^b, P. P. Konstantinov^b, V. V. Khovaylo^a

^a National University of Science and Technology «MISIS», Moscow
^b Ioffe Institute, St. Petersburg

Abstract: The transport properties of $p$-type oxyselenides with the chemical composition Bi$_{1-x}$La$_{x}$CuSeO ($x$ = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La$^{3+}$ for Bi$^{3+}$ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.

Received: 20.12.2018
Revised: 24.12.2018
Accepted: 28.12.2018

DOI: 10.21883/FTP.2019.05.47552.10