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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 4, Pages 533–539 (Mi phts5548)

Semiconductor physics

Inhomogeneous injection and heat-transfer processes in reversely switched dynistors operating in the pulse-frequency repetition modes with a limited heat sink

A. V. Gorbatyuka, B. V. Ivanovb

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"

Abstract: For the first time, a self-consistent computational–theoretical description of the physical processes in reversely switched dynistors (RSDs) is obtained when operating in pulse-frequency modes with a limited heat sink. A simplified representation of the nonlinear multiscale mechanism of interaction between the injection and heat-transfer subsystems is substantiated, and a method for calculating the maximum frequency of the RSD switching unit is developed on this basis. The dependence of the permissible frequency on the cooler power is calculated for the set parameters of the chip and the shape of the switched pulses. It is shown that, with a proper heat sink, each from all RSD modules with a chip area of 1 cm$^2$ and an operating voltage of $U\approx$ 2.5 kV are able to switch an energy of 0.25 J per pulse with a repetition frequency of up to 30 kHz. For high-voltage generators on their basis with $U\approx$ 100 kV, the power transmitted to a load at this frequency amounts to several fractions of a MW.

Received: 22.10.2018
Revised: 29.10.2018
Accepted: 29.10.2018

DOI: 10.21883/FTP.2019.04.47454.9009


 English version:
Semiconductors, 2019, 53:4, 524–529

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© Steklov Math. Inst. of RAS, 2024