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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 3, Pages 309–313 (Mi phts5557)

This article is cited in 6 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Anharmonicity of lattice vibrations in Bi$_{2}$Se$_{3}$ single crystals

Z. I. Badalovaa, N. A. Abdullaeva, G. H. Azhdarova, Kh. V. Aliguliyevaa, S. Sh. Gahramanova, S. A. Nemovb, N. T. Mamedova

a Institute of Physics Azerbaijan Academy of Sciences
b Peter the Great St. Petersburg Polytechnic University

Abstract: The temperature dependences of the Raman-active frequencies $E_{g}^{2}$, $A_{1g}^{2}$ in layered Bi$_{2}$Se$_{3}$ single crystals are studied. The contribution of the thermal expansion to a temperature variation in the frequencies is determined. The decay of the anisotropy of the elastic properties in layered Bi$_{2}$Se$_{3}$ single crystals due to strong spin–orbit coupling is shown. The Gruneisen-mode parameters for phonons $E_{g}^{2}$ and $A_{1g}^{2}$ are calculated. Systematic features in the dependences of vibrational frequencies on the atomic masses in layered Bi$_{2}$Te$_{3}$, Bi$_{2}$Se$_{3}$, and Sb$_{2}$Te$_{3}$ single crystals are determined.

Received: 25.09.2018
Revised: 03.10.2018

DOI: 10.21883/FTP.2019.03.47279.8987


 English version:
Semiconductors, 2019, 53:3, 291–295

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