RUS
ENG
Full version
JOURNALS
// Fizika i Tekhnika Poluprovodnikov
// Archive
Fizika i Tekhnika Poluprovodnikov,
1987
Volume 21,
Issue 2,
Pages
207–211
(Mi phts556)
Peculiarities of High-Temperature Luminescence of Boron-Doped Silicon Carbide Epitaxial Layers
Yu. A. Vodakov
, E. E. Goncharov
,
G. A. Lomakina
,
A. A. Mal'tsev
,
E. N. Mokhov
, V. G. Oding
Fulltext:
PDF file (717 kB)
©
Steklov Math. Inst. of RAS
, 2024