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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 3, Pages 323–328 (Mi phts5560)

This article is cited in 1 paper

Electronic properties of semiconductors

Effect of the copper content on the kinetics of the microwave photoconductivity of CIGS solid solutions

G. F. Novikovab, E. V. Rabenoka, P. S. Orishinaab, M. V. Gapanovicha, I. N. Odinb

a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b Lomonosov Moscow State University

Abstract: The kinetics of the photoresponse of microwave photoconductivity (9 GHz, TE$_{101}$-type cavity) on excitation by laser light pulses with a wavelength of 337 nm and a duration of 8 ns in copper-deficient Cu$_{1-x}$(In$_{0.7}$Ga$_{0.3}$)Se$_{2}$ (CIGS), 0 $<x\le$ 0.4 solid solutions with the chalcopyrite structure is investigated in a wide light intensity range. With an increase in the laser radiation density to $\sim$5 $\times$ 10$^{14}$ photon/cm$^2$ per pulse, the photoresponse acquires, along with the previously revealed skin effect, the effect of the filling of traps created by $V_{\operatorname{Cu}}$ vacancies and Cu$^{+2}$ $\cdot$ $V_{\operatorname{Cu}}$ defect associates, the concentration of which increases with a decrease in $x$ in the CIGS formula.

Received: 08.10.2018
Revised: 15.10.2018

DOI: 10.21883/FTP.2019.03.47282.8994


 English version:
Semiconductors, 2019, 53:3, 304–309

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