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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 3, Pages 396–400 (Mi phts5571)

This article is cited in 7 papers

Semiconductor physics

EMF induced in a $p$$n$ junction under a strong microwave field and light

G. Gulyamova, U. I. Erkaboevb, N. Yu. Sharibaevb, A. G. Gulyamovc

a Namangan Engineering – Building Institute
b Namangan Engineering and Technology Institute, Namangan
c Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan

Abstract: The effect of a strong electromagnetic field on currents and electromotive forces in a $p$$n$ junction is considered. It is shown that a $p$$n$ junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a $p$$n$ junction placed into a strong microwave (UHF) electromagnetic field.

Received: 15.05.2018
Revised: 01.10.2018

DOI: 10.21883/FTP.2019.03.47293.8913


 English version:
Semiconductors, 2019, 53:3, 375–378

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