N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, “Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2,Pages <nobr>161

This article is cited in 1 paper

Electronic properties of semiconductors

Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions

N. A. Sobolev^a, O. V. Aleksandrov^b, V. I. Sakharov^a, I. T. Serenkov^a, E. I. Shek^a, A. E. Kalyadin^a, E. O. Parshin^c, N. S. Melesov^c

^a Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences

Abstract: The implantation of Czochralski-grown $p$-type silicon with 1-MeV germanium ions at a dose of 2.5 $\times$ 10$^{14}$ cm$^{-2}$ does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.

Received: 28.08.2018
Revised: 10.09.2018

DOI: 10.21883/FTP.2019.02.47092.8977