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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 2, Pages 181–189 (Mi phts5584)

This article is cited in 8 papers

Surface, interfaces, thin films

Technique for the formation of antireflection coatings based on ITO films

L. K. Markov, A. S. Pavluchenko, I. P. Smirnova

Ioffe Institute, St. Petersburg

Abstract: A technique for forming transparent conducting indium-tin-oxide films for applications, which require high current densities, are considered. These films have to combine a good surface conductivity with an increased transmittance of radiation within a wide wavelength range. A two-stage process is designed to fabricate such coatings: at the first stage, a dense indium-tin-oxide film with high electrical conductivity is formed; then, an additional antireflection layer of the same material is deposited. Possible methods for optimizing these additional indium-tin-oxide films obtained by forming nanostructured self-assembled coatings on the surface of dense films are investigated. It is shown that the best light extraction over a wide wavelength range is provided by the composite film-deposition technique, which consists in the deposition of self-assembled nanostructured coatings by electron-beam evaporation on a hot substrate and the further filling of voids by magnetron sputtering at room temperature. Since the optical properties of the obtained antireflection coatings depend on the mass ratio of materials deposited at each stage, the technique makes it possible to optimize the film properties on the basis of problems specified by the area of their application. Computer simulation of the behavior of the material distribution in the structure of the studied coatings confirms the ability of the method of combined film deposition to form the smoothest character of the change in the effective refractive index of the coating structure, which leads to the most efficient extraction of optical-range light.

Received: 19.06.2018
Revised: 02.07.2018

DOI: 10.21883/FTP.2019.02.47096.8940


 English version:
Semiconductors, 2019, 53:2, 172–179

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