N. Yu. Gordeev, A. S. Payusov, I. S. Mukhin, A. A. Serin, M. M. Kulagina, Yu. A. Guseva, Yu. M. Shernyakov, Yu. M. Zadiranov, M. V. Maksimov, “Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2,Pages <nobr>211

This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance

N. Yu. Gordeev^a, A. S. Payusov^a, I. S. Mukhin^bc, A. A. Serin^a, M. M. Kulagina^a, Yu. A. Guseva^a, Yu. M. Shernyakov^a, Yu. M. Zadiranov^a, M. V. Maksimov^b

^a Ioffe Institute, St. Petersburg
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 $\mu$m stripe lasers based on ten layers of InAs/InGaAs quantum dots.

Received: 01.08.2018
Revised: 13.08.2018

DOI: 10.21883/FTP.2019.02.47100.8971