E. V. Erofeev, I. V. Fedin, V. V. Fedina, A. P. Fazleev, “Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2,Pages <nobr>249

Manufacturing, processing, testing of materials and structures

Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers

E. V. Erofeev^a, I. V. Fedin^a, V. V. Fedina^a, A. P. Fazleev^b

^a Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia
^b "Mikran" Research and Production Company, Tomsk

Abstract: The formation features of a low-temperature Ta/Al-based ohmic contact to Al$_{0.25}$Ga$_{0.75}$N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 $\Omega$ mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at $T$ = 550$^{\circ}$C in a nitrogen atmosphere.

Received: 16.04.2018
Revised: 23.04.2018

DOI: 10.21883/FTP.2019.02.47108.8870