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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 1, Pages 5–12 (Mi phts5603)

This article is cited in 10 papers

Electronic properties of semiconductors

Study of the effect of doping with iron on the luminescence of zinc-selenide single crystals

A. A. Gladilina, N. N. Il'icheva, V. P. Kalinushkina, M. I. Studenikina, O. V. Uvarova, V. A. Chapnina, V. V. Tumorina, G. G. Novikovb

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b National Engineering Physics Institute "MEPhI", Moscow

Abstract: The effect of doping with iron (thermal diffusion from a surface) on the luminescence of zinc-selenide single crystals in the wavelength range 0.44–0.72 $\mu$m and on the spatial distribution of luminescence centers are studied. By means of two-photon confocal microscopy, planar and volume maps of edge (exciton) and impurity–defect luminescence in the above-indicated spectral range are obtained for both doped and undoped crystals. It is shown that crystal regions containing a high iron concentration exhibit low-intensity luminescence in this range. It is found that, in the process of diffusion, several types of impurity–defect centers distributed in a complex way within the crystal bulk are formed. The nature of these centers is discussed.

Received: 15.01.2018
Revised: 19.01.2018

DOI: 10.21883/FTP.2019.01.46979.8821


 English version:
Semiconductors, 2019, 53:1, 1–8

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