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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 1, Pages 5–12 (Mi phts5603)

This article is cited in 9 papers

Electronic properties of semiconductors

Study of the effect of doping with iron on the luminescence of zinc-selenide single crystals

A. A. Gladilina, N. N. Il'icheva, V. P. Kalinushkina, M. I. Studenikina, O. V. Uvarova, V. A. Chapnina, V. V. Tumorina, G. G. Novikovb

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b National Engineering Physics Institute "MEPhI", Moscow

Abstract: The effect of doping with iron (thermal diffusion from a surface) on the luminescence of zinc-selenide single crystals in the wavelength range 0.44–0.72 $\mu$m and on the spatial distribution of luminescence centers are studied. By means of two-photon confocal microscopy, planar and volume maps of edge (exciton) and impurity–defect luminescence in the above-indicated spectral range are obtained for both doped and undoped crystals. It is shown that crystal regions containing a high iron concentration exhibit low-intensity luminescence in this range. It is found that, in the process of diffusion, several types of impurity–defect centers distributed in a complex way within the crystal bulk are formed. The nature of these centers is discussed.

Received: 15.01.2018
Revised: 19.01.2018

DOI: 10.21883/FTP.2019.01.46979.8821


 English version:
Semiconductors, 2019, 53:1, 1–8

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